characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 11a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) 050-7050 rev c 1-2005 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 500 22 0.24 100500 100 35 apt5024bll_sll (g) 500 2288 3040 265 2.12 -55 to 150 300 2230 960 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak bll sll apt5024bll (g) apt5024sll (g) 500v 22a 0.240 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
050-7050 rev c 1-2005 dynamic characteristics apt5024bll_sll (g) characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 22a ) reverse recovery time (i s = -i d 22a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 22a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 2288 1.3 516 7 8 symbol r jc r ja min typ max 0.47 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 22a @ 25c resistive switching v gs = 15v v dd = 250v i d = 22a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 22a, r g = 5 ? inductive switching @ 125c v dd = 333v v gs = 15v i d = 22a, r g = 5 ? min typ max 1900 417 2743 12 24 86 18 2 167 86 262 99 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 3.97mh, r g = 25 ? , peak i l = 22a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 22a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.500.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 01234567891 0 01 02 03 04 0 5 06 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 6050 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 6050 40 30 20 10 0 1.71.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 typical performance curves v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 050-7050 rev c 1-2005 v gs =15 &10v 6v 5.5v 6.5v 7v 7.5v 8v apt5024bll_sll (g) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 11a i d = 11a v gs = 10v 0.2050.264 0.00544f0.0981f power (watts) rc model junction temp. ( c) case temperature downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 8910 1 1612 84 0 10,000 5,0001,000 100 10 200100 10 1 1 10 100 500 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 22a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s c rss c oss c iss 050-7050 rev c 1-2005 apt5024bll_sll (g) typical performance curves i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 333v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v dd = 333v r g = 5 ? t j = 125c l = 100h 0 10 20 30 40 0 10 20 30 40 0 10 20 30 40 0 5 1015202530 35404550 v dd = 333v i d = 22a t j = 125c l = 100h e on includes diode reverse recovery. 4030 20 10 0 500400 300 200 100 0 5040 30 20 10 0 500400 300 200 100 0 downloaded from: http:///
15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline 050-7050 rev c 1-2005 apt5024bll_sll (g) 90% t d(off) t j = 125 c gate voltage drain voltage drain current 10% 0 90% t f switching energy figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current gate voltage drain voltage t j = 125 c 10 % t d(on) 90% 5 % t r 10 % 5 % switching energy i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt15df60 e3 100% sn plated e1 sac: tin, silver, copper downloaded from: http:///
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